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| polyfet rf devices SM746 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 175.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 270 Watts Junction to Case Thermal Resistance o 0.65 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 125 V Drain to Source Voltage 125 V Gate to Source Voltage 20 V 11.0 A RF CHARACTERISTICS ( 175.0 WATTS OUTPUT ) SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 13 65 20:1 TYP MAX UNITS dB % TEST CONDITIONS Idq = 0.60 A, Vds = 50.0 V, F = Idq = 0.60 A, Vds = 50.0 V, F = 175 MHz 175 MHz VSWR Relative Idq = 0.60 A, Vds = 50.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 4.8 0.50 21.00 288.0 1.2 102.0 MIN 125 6.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 60.00 mA, Vgs = 0V Vds = 50.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 6.00 A Vgs = 20V, Vds = 10V Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SM746 POUT VS PIN GRAPH SM746 Pin vs Pout F=175 MHZ; IDQ=.6A; VDS=50V 240 18 17 16 160 1000 CAPACITANCE VS VOLTAGE S1E 6 DIE CAPACITANCE Ciss 200 Pout 15 14 100 Coss 120 80 Efficiency = 65% 40 Gain 13 10 12 11 10 Crss 1 0 5 10 15 20 0 0 5 10 PIN IN WATTS 15 20 VDS IN VOLTS 25 30 35 40 45 50 IV CURVE S1E 6 DIE IV 25 ID & GM VS VGS 100.00 S1E 6 DIE ID & GM Vs VG Id 20 Id in amps; Gm in mhos 10.00 ID IN AMPS 15 10 1.00 gM 5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6v INVOLTS vg=8v 14 0 16 18 vg=12v 20 0.10 0 2 4 6 8 10 Vgs in Volts 12 14 16 18 S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/08/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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